Molecular beam epitaxy 1996KAO, Yung-Chung.Journal of crystal growth. 1997, Vol 175-76, issn 0022-0248, 702 p., 1Conference Proceedings

Molecular Beam EpitaxyKAO, Yung-Chung.Journal of crystal growth. 1997, Vol 175-76, issn 0022-0248, 655 p., 2Conference Proceedings

Millimeterwave and digital applications of InP-based MBE grown HEMTs and HBTsGREILING, P.Journal of crystal growth. 1997, Vol 175-76, pp 8-12, issn 0022-0248, 1Conference Paper

Mass production of InAs Hall elements by MBESHIBASAKI, I.Journal of crystal growth. 1997, Vol 175-76, pp 13-21, issn 0022-0248, 1Conference Paper

Hybrid MBE growth and mobility limiting factors of n-channel Si/SiGe modulation-doped systemsYUTANI, A; SHIRAKI, Y.Journal of crystal growth. 1997, Vol 175-76, pp 504-508, issn 0022-0248, 1Conference Paper

Suppression of AlGaAs/GaAs superlattice intermixing by p-type dopingMURAKI, K; HORIKOSHI, Y.Journal of crystal growth. 1997, Vol 175-76, pp 162-167, issn 0022-0248, 1Conference Paper

Be redistribution in InGaAs and InP grown by gas source molecular beam epitaxyMOZUME, T; HOSOMI, K.Journal of crystal growth. 1997, Vol 175-76, pp 1223-1230, issn 0022-0248, 2Conference Paper

Luminescence anomaly in band gap tailored In_0.53(Ga_xAl_1-x)_0.47As quaternary alloy grown by molecular beam epitaxyRAMAM, A; CHUA, S. J.Journal of crystal growth. 1997, Vol 175-76, pp 1294-1298, issn 0022-0248, 2Conference Paper

MBE growth of novel GaAs/n-AlGaAs field-effect transistor structures with embedded InAs quantum traps and their transport characteristicsYUSA, G; SAKAKI, H.Journal of crystal growth. 1997, Vol 175-76, pp 730-735, issn 0022-0248, 2Conference Paper

Progress and prospect of group-III nitride semiconductorsAKASAKI, I; AMANO, H.Journal of crystal growth. 1997, Vol 175-76, pp 29-36, issn 0022-0248, 1Conference Paper

Sb-surface segregation and the control of compositional abruptness at the GaAsSb/GaAs interfaceKASPI, R; EVANS, K. R.Journal of crystal growth. 1997, Vol 175-76, pp 838-843, issn 0022-0248, 2Conference Paper

Effect of substrate thickness, back surface texture, reflectivity, and thin film interference on optical band-gap thermometryJOHNSON, S. R; TIEDJE, T.Journal of crystal growth. 1997, Vol 175-76, pp 273-280, issn 0022-0248, 1Conference Paper

Surface crystal-structure of a GaN film as an in situ mask using MOMBEYOSHIDA, S; SASAKI, M.Journal of crystal growth. 1997, Vol 175-76, pp 107-111, issn 0022-0248, 1Conference Paper

MBE growth of Si-doped InAlAsSb layers lattice-matched with InAsKUDO, M; MISHIMA, T.Journal of crystal growth. 1997, Vol 175-76, pp 844-848, issn 0022-0248, 2Conference Paper

Measurement of MBE substrate temperature by photoluminescenceTAKAHIRA, Y; OKAMOTO, H.Journal of crystal growth. 1997, Vol 175-76, pp 267-272, issn 0022-0248, 1Conference Paper

Surface chemistry during metalorganic molecular beam epitaxy studied by pulsed molecular beam scatteringSASAKI, M; YOSHIDA, S.Journal of crystal growth. 1997, Vol 175-76, pp 1178-1185, issn 0022-0248, 2Conference Paper

Vertically stacked quantum wires fabricated by an in situ processing techniqueLOPEZ-LOPEZ, M; ISHIKAWA, T.Journal of crystal growth. 1997, Vol 175-76, pp 799-803, issn 0022-0248, 2Conference Paper

Low temperature (LT) and stoichiometric low temperature (SLT) MBE GaAs and related compounds : improved structural, electrical and optical propertiesMISSOUS, M; O'HAGAN, S.Journal of crystal growth. 1997, Vol 175-76, pp 197-202, issn 0022-0248, 1Conference Paper

Formation of an n-GaAs/n-GaAs regrowth interface without carrier depletion using electron cyclotron resonance hydrogen plasmaNIWA, T; FURUHATA, N; MAEDA, T et al.Journal of crystal growth. 1997, Vol 175-76, pp 441-446, issn 0022-0248, 1Conference Paper

In situ observation of MEE GaAs growth using scanning electron microscopyHOMMA, Y; YAMAGUCHI, H; HORIKOSHI, Y et al.Journal of crystal growth. 1997, Vol 175-76, pp 292-297, issn 0022-0248, 1Conference Paper

MBE growth of n-type ZnSe and ZnS using ethylchloride as a dopantYASUDA, T; ZHANG, B.-P; SEGAWA, Y et al.Journal of crystal growth. 1997, Vol 175-76, pp 583-586, issn 0022-0248, 1Conference Paper

Molecular beam epitaxy of strain-compensated InGaAs/GaAsP quantum-well intersubband photodetectorsBACHER, K; MASSIE, S; SEAFORD, M et al.Journal of crystal growth. 1997, Vol 175-76, pp 977-982, issn 0022-0248, 2Conference Paper

Studies of GaN layers grown on sapphire using an RF-sourceANDERSSON, T. G; NOZAWA, K; HORIKOSHI, Y et al.Journal of crystal growth. 1997, Vol 175-76, pp 117-121, issn 0022-0248, 1Conference Paper

Effects of morphology on photoemission oscillation measurements during growth of resonant tunneling devicesZINCK, J. J; CHOW, D. H.Journal of crystal growth. 1997, Vol 175-76, pp 323-327, issn 0022-0248, 1Conference Paper

In-situ BEEM study of interfacial dislocations and point defectsVON KÄNEL, H; MEYER, T; SIRRINGHAUS, H et al.Journal of crystal growth. 1997, Vol 175-76, pp 340-345, issn 0022-0248, 1Conference Paper